Mems isolation structures

ABSTRACT

A device may comprise a substrate formed of a first semiconductor material and a trench formed in the substrate. A second semiconductor material may be formed in the trench. The second semiconductor material may have first and second portions that are isolated with respect to one another and that are isolated with respect to the first semiconductor material.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.15/728,435 filed Oct. 9, 2017 by at least one common inventor, which isa continuation of U.S. patent application Ser. No. 15/166,019 filed May26, 2016 by at least one common inventor (now U.S. Pat. No. 9,783,413,issued Oct. 10, 2017), which is a continuation of U.S. patentapplication Ser. No. 12/946,430, filed Nov. 15, 2010 by at least onecommon inventor (now U.S. Pat. No. 9,352,962, issued May 31, 2016), allof which are incorporated herein by reference in their respectiveentireties.

BACKGROUND Technical Field

This disclosure generally relates to semiconductor manufacturingtechniques and more particularly relates, for example, tomicroelectromechanical systems (MEMS) manufacturing techniques suitablefor use in actuators and other devices.

Related Art

Actuators for use in miniature cameras and other devices are well known.Such actuators typically comprise voice coils that are used to move alens for focusing, zooming, or optical image stabilization.

Miniature cameras are used in a variety of different electronic devices.For example, miniature cameras are commonly used in cellular telephones,laptop computers, and surveillance devices. Miniature cameras may havemany other applications.

It is frequently desirable to reduce the size of miniature cameras. Asthe size of electronic devices continues to be reduced, the size ofminiature cameras that are part of such electronic devices musttypically be reduced as well. Reduction in the size of the miniaturecameras may be facilitated via the use of microelectromechanical systems(MEMS) manufacturing techniques. For example, microelectromechanicalsystems (MEMS) manufacturing techniques may be used to facilitate thefabrication of smaller actuators and the like.

SUMMARY

According to an embodiment, a device may comprise a substrate formed ofa first semiconductor material and a trench formed in the substrate. Asecond semiconductor material may be formed in the trench. The secondsemiconductor material may have first and second portions that areisolated with respect to one another and that are isolated with respectto the first semiconductor material.

According to an embodiment, a system may comprise an actuator devicehaving a substrate formed of a first semiconductor material and a trenchformed in the substrate. A second semiconductor material may be formedin the trench. The second semiconductor material may have first andsecond portions that are isolated with respect to one another and thatare isolated with respect to the first semiconductor material.

According to an embodiment, a method may comprise forming a trench in asubstrate of a first semiconductor material, forming an oxide layer inthe trench, and forming a second semiconductor material upon the oxidelayer. The second semiconductor material may have two portions that areisolated with respect to one another and that are isolated with respectto the first semiconductor material.

According to an embodiment, a method may comprise moving a movingportion of a MEMS actuator formed of a first semiconductor material withrespect to a fixed portion of the MEMS actuator. The moving portion maybe electrically isolated with respect to the fixed portion via aseparation in a second semiconductor material formed in a trench.

The scope of the disclosure is defined by the claims, which areincorporated into this section by reference. A more completeunderstanding of embodiments will be afforded to those skilled in theart, as well as a realization of additional advantages thereof, by aconsideration of the following detailed description of one or moreembodiments. Reference will be made to the appended sheets of drawingsthat will first be described briefly.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 illustrates an electronic device having an actuator device, inaccordance with an embodiment.

FIG. 2 illustrates a miniature camera having a lens barrel, inaccordance with an embodiment.

FIG. 3A illustrates the lens barrel having an actuator module disposedtherein, in accordance with an embodiment.

FIG. 3B illustrates the lens barrel and an actuator module in anexploded view, in accordance with an embodiment.

FIG. 4 illustrates the actuator module having the actuator devicedisposed therein, in accordance with an embodiment.

FIG. 5A illustrates a top view of the actuator device, in accordancewith an embodiment.

FIG. 5B illustrates a top view of the actuator device, in accordancewith an embodiment.

FIG. 6A illustrates a portion of the actuator device, in accordance withan embodiment.

FIG. 6B illustrates a portion of the actuator device, in accordance withan embodiment.

FIG. 6C illustrates a portion of a platform, in accordance with anembodiment.

FIG. 6D illustrates a bottom view of a movable lens positioned formounting to the actuator device, in accordance with an embodiment.

FIG. 6E illustrates a side view of the movable lens mounted to theactuator device, in accordance with an embodiment.

FIG. 7 illustrates portions of the actuator device, in accordance withan embodiment.

FIG. 8 illustrates a bottom view of the actuator device in a deployedconfiguration, in accordance with an embodiment.

FIG. 9A illustrates a portion of the actuator device in a deployedconfiguration without any voltage applied thereto, in accordance with anembodiment.

FIG. 9B illustrates a portion of the actuator device in a deployedconfiguration with a small voltage applied thereto, in accordance withan embodiment.

FIG. 9C illustrates a portion of the actuator device in a deployedconfiguration with a maximum voltage applied thereto, in accordance withan embodiment.

FIG. 10 illustrates a lateral snubber assembly, in accordance with anembodiment.

FIG. 11 illustrates a hinge flexure and a motion control torsionalflexure, in accordance with an embodiment.

FIG. 12 illustrates an inner motion control hinge, in accordance with anembodiment.

FIG. 13 illustrates a cantilever flexure, in accordance with anembodiment.

FIG. 14 illustrates a serpentine contact flexure and a deploymenttorsional flexure, in accordance with an embodiment.

FIG. 15 illustrates a top view of a deployment stop, in accordance withan embodiment.

FIG. 16 illustrates a bottom view of the deployment stop, in accordancewith an embodiment.

FIG. 17A illustrates a flap damper, in accordance with an embodiment.

FIG. 17B illustrates a movable frame disposed between an upper modulecover and a lower module cover with no shock applied, in accordance withan embodiment.

FIG. 17C illustrates the movable frame disposed between the upper modulecover and the lower module cover with a shock applied, in accordancewith an embodiment.

FIG. 17D illustrates a partial top view of another actuator device, inaccordance with an embodiment.

FIG. 17E illustrates an enlarged top view of the actuator device, inaccordance with an embodiment.

FIG. 17F illustrates an outer hinge flexure, a lateral snubber assembly,a single snubber flap and an interlocking snubber flaps feature of theactuator device, in accordance with an embodiment.

FIGS. 17G and 17H illustrate the outer hinge flexure, in accordance withan embodiment.

FIGS. 17I and 17J illustrate the lateral snubber assembly, in accordancewith an embodiment.

FIGS. 17K and 17L illustrate cross-sectional views of the single snubberflap and the interlocking snubber flaps, in accordance with anembodiment.

FIG. 17M illustrates a top view of the lateral snubber assembly, thesingle snubber flap and the interlocking snubber flaps, in accordancewith an embodiment.

FIG. 17N illustrates cross-sectional views of the single snubber flapand the interlocking snubber flaps, in accordance with an embodiment.

FIG. 18 illustrates a ball-in-socket snubber, in accordance with anembodiment.

FIG. 19 illustrates the ball-in-socket snubber and two frame hinges, inaccordance with an embodiment.

FIG. 20 illustrates a kinematic mount flexure having an electricalcontact, in accordance with an embodiment.

FIG. 21 illustrates the kinematic mount flexure having the electricalcontact, in accordance with an embodiment.

FIG. 22 illustrates a cross-section of the kinematic mount flexure takenalong line 22 of FIG. 21, in accordance with an embodiment.

FIG. 23 illustrates a cross-section of the electrical contact takenalong line 23 of FIG. 21, in accordance with an embodiment.

FIG. 24 illustrates the kinematic mount flexure having the electricalcontact, in accordance with an embodiment.

FIG. 25 illustrates a cross-section of the electrical contact takenalong line 25 of FIG. 24, in accordance with an embodiment.

FIG. 26 illustrates the kinematic mount flexure having the electricalcontact, in accordance with an embodiment.

FIG. 27 illustrates a cross-section of the electrical contact takenalong line 27 of FIG. 26, in accordance with an embodiment.

FIG. 28 illustrates a cross-section of the electrical contact takenalong line 28 of FIG. 26, in accordance with an embodiment.

FIG. 29 illustrates the kinematic mount flexure having the electricalcontact, in accordance with an embodiment.

FIG. 30 illustrates the actuator device having the kinematic mountflexure, in accordance with an embodiment.

FIG. 31 illustrates the actuator device having the kinematic mountflexure, in accordance with an embodiment.

FIG. 32 illustrates a perspective view of a substrate with a trenchhaving a pinch formed therein, in accordance with an embodiment.

FIG. 33 illustrates a top view of the substrate, in accordance with anembodiment.

FIG. 34 illustrates a cross-sectional view of the substrate taken alongline 34 of FIG. 33, in accordance with an embodiment.

FIG. 35 illustrates a cross-sectional view of the substrate taken alongline 35 of FIG. 33, in accordance with an embodiment.

FIG. 36 illustrates a perspective view of the substrate having an oxidelayer formed therein, in accordance with an embodiment.

FIG. 37 illustrates a top view of the substrate, in accordance with anembodiment.

FIG. 38 illustrates a cross-sectional view of the substrate taken alongline 38 of FIG. 37, in accordance with an embodiment.

FIG. 39 illustrates a cross-sectional view of the substrate taken alongline 39 of FIG. 37, in accordance with an embodiment.

FIG. 40 illustrates a perspective view of the substrate having apolysilicon formed upon the oxide layer, in accordance with anembodiment.

FIG. 41 illustrates a top view of the substrate, in accordance with anembodiment.

FIG. 42 illustrates a cross-sectional view of the substrate taken alongline 42 of FIG. 41, in accordance with an embodiment.

FIG. 43 illustrates a cross-sectional view of the substrate taken alongline 43 of FIG. 41, in accordance with an embodiment.

FIG. 44 illustrates a perspective view of the substrate after a waferthinning and oxide removal process, in accordance with an embodiment.

FIG. 45 illustrates a top view of the substrate, in accordance with anembodiment.

FIG. 46 illustrates a bottom view of the substrate, in accordance withan embodiment.

FIG. 47 illustrates a cross-sectional view of the substrate taken alongline 47 of FIG. 45, in accordance with an embodiment.

FIG. 48 illustrates a cross-sectional view of the substrate taken alongline 48 of FIG. 45, in accordance with an embodiment.

FIG. 49 illustrates a substrate after a deep reactive-ion etch (DRIE)trench etch process, in accordance with an embodiment.

FIG. 50 illustrates the substrate after a thermal oxidation process, inaccordance with an embodiment.

FIG. 51 illustrates the substrate after a polysilicon depositionprocess, in accordance with an embodiment.

FIG. 52 illustrates the substrate after an oxide etch process andsurface polysilicon etch, in accordance with an embodiment.

FIG. 53 illustrates the substrate after the DRIE etch process has formeda separation in the polysilicon, in accordance with an embodiment.

FIG. 54 illustrates the substrate after the wafer thinning process, inaccordance with an embodiment.

FIG. 55 illustrates the substrate after an isotropic oxide etch process,in accordance with an embodiment.

FIG. 56 illustrates the substrate after a separation has been formed inthe polysilicon, in accordance with an embodiment.

FIG. 57 illustrates an example of a use of a pinch or separation, inaccordance with an embodiment.

FIG. 58 illustrates an enlarged view of an example of the pinch orseparation, in accordance with an embodiment.

FIG. 59 illustrates a guard trench formed in a substrate proximate aregular trench, in accordance with an embodiment.

FIG. 60 illustrates the oxide layer formed in the guard trench and theregular trench, in accordance with an embodiment.

FIG. 61 illustrates polysilicon formed upon the oxide layer, inaccordance with an embodiment.

FIG. 62 illustrates the oxide layer and the polysilicon after surfaceetching, in accordance with an embodiment.

FIG. 63 illustrates the substrate after wafer thinning, in accordancewith an embodiment.

FIG. 64 illustrates the substrate, oxide layer, and polysilicon after anisotropic oxide etch, in accordance with an embodiment.

FIG. 65 illustrates an actuator device having the guard trench, inaccordance with an embodiment.

FIG. 66 illustrates an enlarged view of the guard trench, in accordancewith an embodiment.

FIG. 67 illustrates a DRIE process, in accordance with an embodiment.

FIG. 68 illustrates a linear oxide growth process, in accordance with anembodiment.

FIG. 69 illustrates a polysilicon deposition process, in accordance withan embodiment.

FIG. 70 illustrates a polysilicon and oxide etch process, in accordancewith an embodiment.

FIG. 71 illustrates a DRIE process, in accordance with an embodiment.

FIG. 72 illustrates a metallization process, in accordance with anembodiment.

FIG. 73 illustrates a wafer thinning process, in accordance with anembodiment.

FIG. 74 illustrates isotropic oxide etch process, in accordance with anembodiment.

Embodiments of the disclosure and their advantages are best understoodby referring to the detailed description that follows. It should beappreciated that like reference numerals are used to identify likeelements illustrated in one or more of the figures.

DETAILED DESCRIPTION

An actuator device suitable for use in a wide variety of differentelectronic devices is disclosed in accordance with various embodiments.The actuator device may be adapted for use in a camera, such as aminiature camera, for example. The actuator device may be used to eithermanually or automatically focus the miniature camera. The actuatordevice may be used to zoom the miniature camera or to provide opticalimage stabilization for the miniature camera. The actuator device may beused to align the optics within the camera. The actuator device may beused for any other desired application in an electronic device or in anyother device.

In accordance with one or more embodiments, the actuator device maycomprise one or more MEMS actuators. The actuator device may be formedusing monolithic construction. The actuator device may be formed usingnon-monolithic construction.

The actuator device may be formed using contemporary fabricationtechniques, such as etching and micromachining, for example. Variousother fabrication techniques are contemplated.

The actuator device may be formed of silicon (e.g., single crystalsilicon and/or polycrystalline silicon). The actuator device may beformed of other semiconductors such as silicon, germanium, diamond, andgallium arsenide. The material of which the actuator device is formedmay be doped to obtain a desired conductivity thereof. The actuatordevice may be formed of a metal such as tungsten, titanium, germanium,aluminum, or nickel. Any desired combination of such materials may beused.

Motion control of the actuator device and/or items moved by the actuatordevice is disclosed in accordance with various embodiments. The motioncontrol may be used to facilitate a desired movement of an item whilemitigating undesired movement of the item. For example, the motioncontrol may be used to facilitate movement of a lens along an opticalaxis of the lens, while inhibiting other movements of the lens. Thus,the motion control may be used to facilitate movement of the lens insingle desired translational degree of freedom while inhibiting movementof the lens in all other translational degrees of freedom and whileinhibiting movement of the lens in all rotational degrees of freedom. Inanother example, the motion control may facilitate movement of the lensin all three translational degrees of freedom while inhibiting movementof the lens in all rotational degrees of freedom.

Thus, an enhanced miniature camera for standalone use and for use inelectronic devices may be provided. The miniature camera is suitable foruse in a wide variety of different electronic devices. For example, theminiature camera is suitable for use in electronic devices such ascellular telephones, laptop computers, televisions, handheld devices,and surveillance devices.

According to various embodiments, smaller size and enhanced shockresistance are provided. Enhanced fabrication techniques may be used toprovide these and other advantages. Such fabrication techniques mayadditionally enhance the overall quality and reliability of miniaturecameras while also substantially reducing the cost thereof.

FIG. 1 illustrates an electronic device 100 having an actuator device400, in accordance with an embodiment. As discussed herein, the actuatordevice 400 may have one or more actuators 550. In one embodiment, theactuators 550 may be MEMS actuators, such as electrostatic comb driveactuators. In one embodiment, the actuators 550 may be rotational combdrive actuators.

The electronic device 100 may have one or more actuators 550 for movingany desired component thereof. For example, the electronic device 100may have an optical device such as a miniature camera 101 that has theactuator 550 for moving optical elements such as one or more movablelenses 301 (shown in FIG. 2) that are adapted to provide focus, zoom,and/or image stabilization. The electronic device 100 may have anydesired number of the actuators 550 for performing any desiredfunctions.

The electronic device 100 may be a cellular telephone, a laptopcomputer, a surveillance device, or any other desired device. Theminiature camera 101 may be built into the electronic device 100, may beattached to the electronic device 100, or may be separate (e.g., remote)with respect to the electronic device 100.

FIG. 2 illustrates the miniature camera 101 having a lens barrel 200, inaccordance with an embodiment. The lens barrel 200 may contain one ormore optical elements, such as the movable lens 301, which may be movedby the actuator device 400 (shown in FIG. 1). The lens barrel 200 mayhave one or more optical elements which may be fixed. For example, thelens barrel 200 may contain one or more lenses, apertures (variable orfixed), shutters, mirrors (which may be flat, non-flat, powered, ornon-powered), prisms, spatial light modulators, diffraction gratings,lasers, LEDs and/or detectors. Any of these items may be fixed or may bemovable by the actuator device 400.

The actuator device 400 may move non-optical devices such as samplesthat are provided for scanning. The samples may be either biologicalsamples or non-biological samples. Examples of biological samplesinclude organisms, tissues, cells, and proteins. Examples ofnon-biological samples include solids, liquids, and gases. The actuatordevice 400 may be used to manipulate structures, light, sound, or anyother desired thing.

The optical elements may be partially or fully contained within the lensbarrel 200. The lens barrel 200 may have any desired shape, For example,the lens barrel 200 may be substantially round, triangular, rectangular,square, pentagonal, hexagonal, octagonal, or of any other shape orcross-sectional configuration. The lens barrel 200 may be eitherpermanently or removably attached to the miniature camera 101. The lensbarrel 200 may be defined by a portion of a housing of the miniaturecamera 101. The lens barrel 200 may be partially or completely disposedwithin the miniature camera 101.

FIG. 3A illustrates an actuator module 300 disposed within the lensbarrel 200, in accordance with an embodiment. The actuator module 300may contain the actuator device 400. The actuator device 400 may becompletely contained within the lens barrel 200, partially containedwithin the lens barrel 200, or completely outside of the lens barrel200. The actuator device 400 may be adapted to move optical elementscontained within the lens barrel 200, optical elements not containedwithin the lens barrel 200, and/or any other desired items.

FIG. 3B illustrates the lens barrel 200 and the actuator module 300 inan exploded view, in accordance with an embodiment. The movable lens 301is an example of an optical element that may be attached to the actuatordevice 400 and may be moved thereby. The actuator device 400 may bedisposed intermediate an upper module cover 401 and a lower module cover402.

Additional optical elements, such as fixed (e.g., stationary) lenses 302may be provided. The additional optical elements may facilitate focus,zoom, and/or optical image stabilization, for example. Any desirednumber and/or type of movable (such as via the actuator device 400) andfixed optical elements may be provided.

FIG. 4 illustrates the actuator module 300, in accordance with anembodiment. The actuator module 300 may be disposed partially orcompletely within the miniature camera 101. The actuator device 400 maybe disposed partially or completely within the actuator module 300. Forexample, the actuator device 400 may be sandwiched substantially betweenan upper module cover 401 and a lower module cover 402.

The actuator module 300 may have any desired shape. For example, theactuator module 300 may be substantially round, triangular, square,rectangular, pentagonal, hexagonal, octagonal, or of any other shape orcross-sectional configuration.

In one embodiment, the lens barrel 200 may be substantially round incross-sectional configuration and the actuator module 300 may besubstantially round in cross-sectional configuration. The use of asubstantially round lens barrel 200 and a substantially round actuatormodule 300 may facilitate an advantageous reduction in size. Thereduction in size may be facilitated, for example, because round lensesare commonly preferred. The use of a substantially round lens barrel 200and a substantially round actuator module 300 with round lenses tends toresult in a reduction of wasted volume and thus tends to facilitate areduction in size.

As discussed herein, one or more optical elements, such as the movablelens 301, may be disposed in an opening 405 (e.g., a hole) formed in theactuator module 300. Actuation of the actuators 550 may effect movementof the optical elements along their optical axis 410, for example. Thus,actuation of the actuators 550 may move one or more lenses to effectfocusing or zoom, for example.

The actuator module 300 may have cutouts 403 formed therein tofacilitate assembly of the actuator module 300 and alignment of theactuator device 400 contained therein. The cutouts 403 and/or electricalcontacts 404 partially disposed within the cutouts 403 may be used tofacilitate alignment of the actuator module 300 with respect to the lensbarrel 200.

FIG. 5A illustrates a top view of the actuator device 400 having theelectrical contacts 404, the opening 405, inner hinge flexures 501,kinematic mount flexures 502, movable frames 505, an outer frame 506,serpentine contact flexures 508, deployment torsional flexures 509,deployment stops 510, flap dampers 511, ball-in-socket snubbers 513,cantilever flexures 514, motion control torsional flexures 515, outerhinge flexures 516, a fixed frame 517, a platform 520, lens pads 521, apivot axis 525, the actuators 550, spaces 551, and blocks 552, inaccordance with an embodiment.

Blocks 552 (FIG. 5A) are shown to represent teeth 560 (see FIGS. 5B and7) of the actuator 550 in some figures. Those skilled in the art willappreciate that comb drives typically comprise a large number of verysmall teeth 560 that are difficult to show graphically on a drawing ofthis scale. For example, the actuator 550 may have between 1 and 10,000teeth on each side thereof and may have approximately 2,000 teeth oneach side thereof. Thus, in one embodiment, the blocks 552 may notrepresent the actual configuration of the teeth 560, but rather areshown in place of the teeth 560 to better illustrate the operation ofthe actuators 550, as discussed herein.

In accordance with an embodiment, the actuator device 400 may besubstantially hexagonal in shape. The hexagonal shape readilyfacilitates placement of the actuator device 400 within thesubstantially round lens barrel 200. The hexagonal shape alsofacilitates efficient use of wafer real estate. Other shapes arecontemplated.

The actuator device 400 may have a plurality of the actuators 550. Onlyone actuator 550 is illustrated in detail in FIG. 5A. The spaces 551 areshown in FIG. 5A for two additional actuators 550 that are notillustrated in detail. Thus, in one embodiment the actuator device 400may have three actuators 550 disposed in a substantially radiallysymmetric pattern about the opening 405 such that the actuators 550 arespaced approximately 120° apart from one another. The actuator device400 may have any desired number of the actuators 550 disposed in anydesired pattern. As further examples, the actuator device 400 may havetwo actuators 550 spaced approximately 180° apart from one another ormay have four actuators 550 spaced approximately 90° apart from oneanother.

As discussed herein, the actuators 550 may include one or more MEMSactuators, voice coil actuators, or any other desired type orcombination of types of actuators. For example, in one embodiment, eachactuator 550 may be a vertical rotational comb drive.

The actuators 550 may cooperate with one another to move a platform 520along the optical axis 410 (FIG. 3B), which in FIG. 5A is perpendicularto the plane of the actuator device 400. The actuators 550 may cooperatewith one another to move the platform 520 in a manner that maintains theplatform 520 substantially orthogonal with respect to the optical axis410 and in a manner that substantially mitigates rotation of theplatform 520.

Actuation of the actuators 550 is accomplished by the application of avoltage differential between adjacent teeth 560, represented by blocks552. Such actuation effects rotation of the actuators 550 to facilitatethe herein described movement of the platform 520.

In various embodiments, the platform 520 may be adapted substantially asa ring (e.g., as shown in FIG. 5A). Other shapes are contemplated. Theplatform 520 may have any desired shape.

Prior to deployment, the actuator device 400 may be a substantiallyplanar structure. For example, the actuator device 400 may besubstantially formed from a single, monolithic piece of material, suchas silicon. The actuator device 400 may be formed from a single die. Thedie may be approximately 4 to 5 millimeters across and approximately 150microns thick, for example.

The actuator device 400 may be formed by a MEMS technique, such asmilling or etching. A plurality of actuator devices 400 may be formedupon a single wafer. The overall shape or footprint of the actuatordevice 400 may be adapted to enhance the formation of a plurality of theactuator devices 400 on a single wafer.

Prior to operation, the fixed frame 517 of each actuator 550 may bedeployed to offset the adjacent pairs of teeth 560 represented by blocks552 with respect to one another, in accordance with an embodiment.Deployment may result in a substantially non-planar overallconfiguration of the actuator device 400. When deployed, each actuator550 may have a portion thereof (e.g., the fixed frame 517) extendingfrom the plane of the outer frame 506. The fixed frame 517 may extendfrom the plane of the outer frame 506 at an angle with respect thereto.Thus, when deployed, the fixed frame 517 may be substantiallyout-of-plane with respect to the outer frame 506.

Once deployed, the fixed frames 517 may be fixed or locked into positionsuch that they do not move further with respect to the outer frame 506,and are angularly offset or rotated with respect to the outer frame 506and with respect to the movable frame 505 (when the actuator 550 is notactuated). The fixed frames 517 may be mechanically fixed in position,adhesively bonded in position, or any desired combination ofmechanically fixed and adhesively bonded.

Actuation of the actuator 550 may cause the movable frame 505 to rotatetoward the deployed fixed frame 517 to effect desired movement of theplatform 520. Motion control torsional flexures 515 and outer hingeflexures 516 cooperate to facilitate motion controlled rotation of themovable frame 505, as discussed herein. The movable frame 505 rotatesabout the pivot axis 525.

FIG. 5B illustrates a top view of the actuator device 400 having teeth560 shown in the actuator 550 in place of the blocks 552 representativethereof, in accordance with an embodiment. The teeth 560 shown may beconsidered to be reduced in number and exaggerated in size for clarityin FIG. 5B.

FIG. 6A illustrates a top view of one of the actuators 550 having theinner hinge flexures 501, the ball-in-socket snubbers 513, the movableframe 505, the outer hinge flexures 516, the motion control torsionalflexures 515, the cantilever flexures 514, the fixed frame 517, thepivot axis 525, the serpentine contact flexure 508, the pseudokinematicmount and electrical contact 404, and the platform 520, in accordancewith an embodiment. FIG. 6A further illustrates a lateral snubberassembly 1001, which is further described herein.

The inner hinge flexure 501 cooperates with the cantilever flexure 514to transfer desired motion from the movable frame 505 to the platform520. Thus, actuation of the actuator 550 results in rotation of themovable frame 505, which in turn results in translation of the platform520, as discussed herein.

The movable frame 505 may pivot on the outer hinge flexures 516 in afashion similar to a door pivoting on its hinges. Upon the applicationof a shear force to the actuator device 400, one of the two outer hingeflexures 516 of the actuator 550 may be in tension while the outer hingeflexure 516 may be in compression. The two motion control torsionalflexures 515 tend to mitigate undesirable buckling of the outer hingeflexure 516 in such instances.

Each actuator may be substantially disposed within a motion controlmechanism that provides comparatively high lateral stiffness andcomparatively soft rotational stiffness. In one embodiment, the motioncontrol mechanism may have one or more (e.g., two) outer hinges flexures516 and may have one or more (e.g., two) motion control torsionalflexures 515. Thus, movement of the movable frame 505 may besubstantially constrained to desirable rotation thereof.

In one embodiment, the motion control mechanism for one actuator 550 maycomprise the outer frame 506, movable frame 505, the motion controltorsional flexures 515, the outer hinge flexures 516, the inner hingeflexures 501, the cantilever flexure 514, and the platform 520. In oneembodiment, the motion control mechanism may comprise all structuresthat tend to limit movement of the platform 520 to desired translationalmovement.

Each actuator 550 may be substantially contained within the motioncontrol mechanism to substantially limit competition for real estate onthe actuator device 400, in accordance with an embodiment. Since eachactuator 550 and its associated motion control mechanism occupysubstantially the same surface area of the actuator device 400, they donot compete for real estate. Thus, as the actuator 550 increases insize, its associated motion control mechanism may also increase in size.In certain embodiments, it is desirable to increase the size of anactuator 550 to increase the force provided thereby. In certainembodiments, it is desirable to also increase the size of the motioncontrol mechanism to maintain its ability to desirably limit movement ofthe platform 520. The movable frame 550 may be considered as a portionof the motion control mechanism.

FIG. 6B illustrates the actuator 550 showing the fixed frame 517 shadedfor clarity, in accordance with an embodiment. The shaded fixed frame517 may be deployed to a position out-of-plane of the actuator device400 and may be fixed in this deployed position.

The movable frame 505 may support moving portions of the actuator 550,such as some of the teeth 560 (see FIG. 7). The fixed frame 517 maysupport fixed portions of the actuator 550, such as others of the teeth560 (see FIG. 7). The application of a voltage to the actuator 550 maycause the movable frame 505 to rotate about the outer hinge flexures 516toward the fixed frame 517. Removal or reduction of the voltage maypermit a spring force applied by the inner hinge flexures 514, the outerhinge flexures 516 and the motion control torsional flexure 515 torotate the movable frame 505 away from the fixed frame 517. Sufficientclearance between the movable frame 505 and the fixed frame 517 may beprovided to accommodate such desired movement.

FIG. 6C illustrates a portion of the platform 520 having radialvariations 571, in accordance with an embodiment. In one embodiment, theradial variations 571 may be formed in the platform 520 to permit theplatform 520 to expand. The radial variations 571 may be angular bendsin the platform 520. Thus, an optical element such as the movable lens301 may be inserted into the opening 405 of the platform 520, which mayexpand to receive the movable lens 301 and which may grip the movablelens 301. The opening 405 may expand as the radial variations 571 of theplatform 520 deform (e.g., tend to straighten), so as to increase thecircumference of the opening 405.

FIG. 6D illustrates a perspective view of a movable lens positioned formounting to the actuator device 400 and FIG. 6E illustrates a side viewof the movable lens 301 attached to the actuator device 400, inaccordance with an embodiment. In one embodiment, the movable lens 301may be adhesively bonded to the platform 550, such as by adhesivelybonding standoffs 522 of the movable lens 301 to the lens pads 521. Forexample, epoxy 523 may be used to adhesively bond the movable lens 301to the platform 520. The movable lens 301 may be supported by the lenspad 521.

FIG. 7 illustrates a portion of the actuator 550 showing blocks 552superimposed over the teeth 560 of an actuator 550, in accordance withan embodiment. As discussed herein, the blocks 552 are representative ofthe teeth 560.

FIG. 8 illustrates a bottom perspective view of the actuator device 400in a deployed configuration, in accordance with an embodiment. In thedeployed configuration the unactuated movable frame 505 is substantiallyin-plane with respect to the outer frame 506 and the deployed fixedframe 517 is substantially out-of-plane with respect to the outer frame506 and the movable frame 505.

A voltage may be applied to each actuator 550 via the electricalcontacts 404. For example, two of the three contacts 404 may be used toapply a voltage from the lens barrel 200 to the actuator device 400. Thethird contact 404 may be unused or may be used to redundantly apply onepolarity of the voltage from the lens barrel 200 to the actuator device400.

Substantially the same voltage may be applied to the three actuators 550to result in substantially the same movement of the moving frames 505thereof. Application of substantially the same voltage to the threeactuators 550 may result in translation of the platform 520 with respectto the outer frame 506 such that the platform 520 remains substantiallyparallel to the outer frame 506. Thus, an optical element such as themovable lens 301 may be maintained in a desired alignment as the opticalelement is moved, such as along an optical axis 410 (FIG. 3B) thereof.

Substantially different voltages may be applied to the three actuators550 to result in substantially different movements of the moving frames505 thereof. Substantially different voltages may be applied to thethree actuators 550 using the three contacts 404 and a common return.Thus, each contact 404 may apply a separately controlled voltage to adedicated one of the three actuators 550.

The application of substantially different voltages to the threeactuators 550 may result in translation of the platform 520 with respectto the outer frame 506 such that the platform tilts substantially withrespect to the outer frame 506. Thus, when substantially differentvoltages are applied, the platform 520 does not necessarily remainsubstantially parallel to the outer frame. The application of differentvoltages to the three actuators 550 may be used to align the platform520 to the outer frame 506, for example. The application of differentvoltages to the three actuators 550 may be used to facilitate opticalimage stabilization or lens alignment, for example.

FIG. 9A illustrates a portion of the actuator device 400 in a deployedconfiguration without any voltage applied thereto, in accordance with anembodiment. Without any voltage applied to the actuator device 400, themovable frame 505 is substantially in-plane with respect to the outerframe 506 and the deployed fixed frame 517 is substantially out-of-planewith respect to the outer frame 506 and the movable frame 505.

FIG. 9B illustrates a portion of the actuator device 400 in a deployedconfiguration with a small voltage applied thereto, in accordance withan embodiment. With the small voltage applied, the movable frame 505 hasrotated toward the deployed fixed frame 517 and is in a partiallyactuated position.

FIG. 9C illustrates a portion of the actuator device 400 in a deployedconfiguration with a maximum voltage applied thereto, in accordance withan embodiment. As may be seen, the movable frame 505 has rotated furthertoward the deployed fixed frame 517 and is in a fully actuated position.

FIG. 10 illustrates a top view of a lateral snubber assembly 1001, inaccordance with an embodiment. The lateral snubber assembly 1001 mayhave a first snubber member 1002 and a second snubber member 1003. Thefirst snubber member 1002 may be formed upon the fixed frame 517 and thesecond snubber member may be formed upon the movable frame 505. Thefirst snubber member 1002 and the second snubber member 1003 maycooperate to inhibit undesirable lateral motion of the movable frame 505with respect to the fixed frame 517 (and consequently with respect tothe outer frame 506, as well) during shock or large accelerations. A gap“D” between the first snubber member 1002 and the second snubber member1003 may approximately 2-3 micrometers wide to limit such undesirablelateral motion.

FIG. 11 illustrates a perspective view of the motion control torsionalflexure 515 and the outer hinge flexure 516, in accordance with anembodiment. The motion control torsional flexure 515 and the outer hingeflexure 516 may be thinner than other portions of the actuator device400 to provide the desired stiffness of the motion control torsionalflexure 515 and the outer hinge flexure 516. For example, in oneembodiment the outer hinge flexures 516, the inner hinge flexures 501,and the motion control torsional flexures 515 may have a width ofapproximately 100 microns and a thickness of approximately 2-3 microns.

The motion control torsional flexure 515 may be located on the pivotaxis 525. In one embodiment, the pivot axis 525 is a line that connectsthe centers of the two outer hinge flexures 516. In one embodiment, thepivot axis 525 is the hinge line or axis about which the movable frame506 rotates.

FIG. 12 illustrates a perspective view of an inner hinge flexure 501, inaccordance with an embodiment. The inner hinge flexure 501 may bethinner than other portions of the actuator device 400 to provide thedesired stiffness of the inner hinge flexure 501. For example, in oneembodiment, the inner hinge flexure 501 may be approximately 500micrometers long, 60 micrometers wide, and 2-3 micrometers thick.

FIG. 13 illustrates a perspective view of a cantilever flexure 514having the inner hinge flexure 501, a first thinned section 1301, athicker section 1302, and a second thinned section 1303, in accordancewith an embodiment. The cantilever flexure 514 may be used to transfermovement of the movable frames 505 to the platform 520. The cantileverflexure 514 may be used to facilitate the conversion of rotation of themovable frames 505 into translation of the platform 520.

The inner hinge flexure 501 may bend to permit the movable frame 505 torotate while the platform 520 translates. The first thinned section 1301and the second thinned section 1303 may bend to permit a change indistance between the movable frame 505 and the platform 520 as themovable frame 505 transfers movement to the platform 520.

The cantilever flexure 514 may be thinner proximate the ends thereof andmay be thicker proximate the center thereof. Such configuration maydetermine a desired ratio of stiffnesses for the cantilever flexure 514.For example, it may be desirable to have a comparatively low stiffnessradially to compensate for the change in distance between the movableframes 505 and the platform 520 as the movable frame 505 transfersmovement to the platform 520.

FIG. 14 illustrates a perspective view of the serpentine contact flexure508 and the deployment torsional flexure 509, in accordance with anembodiment. The serpentine contact flexure 508 may facilitate electricalcontact between the electrical contacts 404 and the deployed fixedframe. The deployment torsional flexures 509 may facilitate rotation ofthe deployed fixed frame 517 with respect to the outer frame 506 duringdeployment.

FIG. 15 illustrates a perspective top view of a deployment stop 510showing that it does not contact an outer frame 506 on the top side whendeployed, in accordance with an embodiment. An epoxy 1501 may be appliedto the top surfaces of the deployment stop 510 and the outer frame 506to fix the deployment stop 510 into position with respect to the outerframe 506. Thus, the epoxy 1501 may fix the deployed fixed frame 517into position with respect to the outer frame 506. Various portions ofthe deployed fixed frame 517 may function as the deployment stops 517.For example, other portions of the deployed fixed frame 517 that abutthe outer frame 506 when the deployed fixed frame is deployed mayfunction as the deployment stops 510.

FIG. 16 illustrates a perspective bottom view of the deployment stop 510showing that it contacts the outer frame 506 on the bottom side whendeployed, in accordance with an embodiment. The epoxy 1501 may beapplied to the bottom surfaces of the deployment stop 510 and the outerframe 506 to fix the deployment stop 510 into position with respect tothe outer frame 506. The epoxy 1501 may be applied to both the topsurfaces and the bottom surfaces of the deployment stop 510 and theouter frame 506, if desired.

FIG. 17A illustrates a perspective view of a flap damper 511, inaccordance with an embodiment. The flap damper 511 is located where thedesirable relative motion during intended operation, (e.g., actuation)of actuators 550, is comparatively low and where the potentialundesirable relative motion during shock is comparatively high. Forexample, the flap damper 511 may be formed on the pivot axis 525.

A damping material 1701 may extend across a gap 1702 formed between theouter frame 506 and the movable frame 505. The damping material 1701 mayhave a high damping coefficient. For example, in one embodiment, thedamping material 1701 may have a damping coefficient of between 0.7 and0.9. For example, the damping material 1701 may have a dampingcoefficient of approximately 0.8. In one embodiment, the dampingmaterial 1701 may be an epoxy.

The damping material 1701 may readily permit the desired motion of themovable frame 505 relative to the outer frame 506. The damping material1701 may inhibit undesired motion of the movable frame 505 relative tothe outer frame 506 due to a shock. Thus, the damping material 1701 maypermit rotation of the movable frame 505 relative to the outer frame 506during actuation of the actuators 550 and may inhibit lateral motionand/or out of plane motion of the movable frame 505 relative to theouter frame 506 during a shock.

The flap damper 511 may have a flap 1706 that extends from the movableframe 505 and may have a flap 1707 that extends from the outer frame506. A gap 1702 may be formed between the flap 1706 and the flap 1707.

An extension 1708 may extend from the flap 1706 and/or an extension 1709may extend from the flap 1707. The extension 1708 and the extension 1709may extend the length of the gap 1702 such that more damping material1701 may be used than would be possible without the extension 1708and/or the extension 1709.

Trenches 1719 may be formed in flaps 1706 and/or 1707 and a trenchmaterial 1720 that is different from the material of the flaps 1706 and1707 may be deposited within the trenches 1719. For example, the flaps1706 and 1707 may be formed of single crystalline silicon and the trenchmaterial 1720 may be formed of polycrystalline silicon. Any desiredcombination of materials may be used for the flaps 1706 and 1707 and forthe trench material 1720, so as to achieve the desired stiffness of theflaps 1706 and 1707.

FIG. 17B illustrates the movable frame 505 disposed between the uppermodule cover 401 and the lower module cover 402 without a shock beingapplied thereto. In the absence of a shock, the movable frame 505remains in its unactuated position and the outer hinge flexure 516 isunbent.

FIG. 17C illustrates the movable frame 505 after it has been moved to aposition against the lower module cover 402 by a shock, such as may becaused by dropping the electronic device 100. Movement of the movableframe 505 may be limited or snubbed by the lower module housing 402 andundesirable double bending of the outer hinge flexure 516 may be limitedthereby. In a similar fashion, the upper module housing 401 may limitmovement of the movable frame 505 and double bending of the outer hingeflexure 516. Thus, undesirable stress within the outer hinge flexures516 may be mitigated.

FIGS. 17D-17H illustrate an alternative embodiment of an outer hingeflexure 1752. As illustrated in these figures, in some embodiments, theouter hinge flexures 1752 may be X-shaped for increased control of themotion of the moveable frame 505 in the lateral direction. The outerhinge flexures 516, 1752 may generally tend to bend, such as about acentral portion thereof, to facilitate movement of the moveable frame505 with respect to the outer frame 506. Other shapes are contemplated.For example, the outer hinge flexure 1752 can be shaped like a H, I, M,N, V, W, Y, or may have any other desired shape. Each outer hingeflexure 1752 can comprise any desired number of structures thatinterconnect the outer frame 506 and the movable frame 505. Thestructures may be interconnected or may not be interconnected. Thestructures may be substantially identical with respect to one another ormay be substantially different with respect to one another. Each outerhinge flexure 1752 may be substantially identical with respect to eachother hinge flexure 1752 or may be substantially different with respectthereto.

The outer hinge flexures 516, 1752 and any other structures may beformed by etching as discussed herein. The outer hinge flexure and anyouter structures may comprise single crystalline silicon,polycrystalline silicon, or any combination thereof.

FIGS. 17D-F and 17I-17N show an alternative embodiment of the lateralsnubber assembly 1754, another embodiment of which is disused withrespect to FIG. 10 herein. The lateral snubber assembly 1754 of FIGS.17D-F and 17I-17N generally has more rounded curves with respect to thelateral snubber assembly 1001 of FIG. 10.

FIGS. 17D-17F illustrate an alternative embodiment of an interlockingsnubber flaps feature 1756 useful for constraining both verticalmovement of a component, e.g., moveable component 505, in the ±Zdirections, as well as lateral movement thereof, i.e., in the ±X and/or±Y directions. As may be seen in the cross-sectional views of FIGS. 17K,17L and 17N, the structure of and methods for forming the interlockingflaps feature 1756 are similar to those of the interlocking flapsfeature 5000 discussed above in connection with FIGS. 49-53.

As illustrated in FIG. 17F, this interlocking flaps feature includes theformation of a pair of flaps 1756A and 1756B respectively extending frommoveable and fixed components 505 and 506 and over a correspondingshoulder 1762 formed on the other, opposing component. The flap 1756A onthe moveable component 505 limits motion of the moveable component 505in the −Z direction, and the flap 1756B on the fixed component 506limits motion of the moveable component 505 in the +Z direction.Additionally, as illustrated in FIGS. 17K, 17L and 17N, the gap 1760between the two components 505 and 506, which may be formed as discussedabove in connection with FIGS. 49A-49F, may limit motion of the moveablecomponent 505 in the ±X and/or ±Y directions.

As illustrated in FIG. 17M, the respective front ends of the flaps 1756Aand 1756B may define corners at the opposite ends thereof, and one ormore of the corners may incorporate elliptical fillets 1766.

As illustrated in FIGS. 17D-17L and FIGS. 17K-17N, a single snubber flap1758 may be provided for constraining lateral movement of a component,e.g., moveable component 505, in an actuator device 1750. For example,the snubber flap 1758, which in some embodiments may comprisepolysilicon, may extend from a fixed component, e.g., component 506, andtoward but not over, the moveable component 505 to limit motion of themoveable component 505 in the lateral, i.e., in the in the ±X and/or ±Ydirections. As illustrated in FIGS. 17K, 17L and 17N, the gap 1764between the fixed and moveable components 505 and 506 can be maderelatively larger than the gap 1768 between the snubber flap 1758 andthe moveable component 505, such that the snubber flap 1758 does notinterfere with normal rotational motion of the movable component 505,but does function to prevent unwanted lateral motion thereof.

FIG. 18 illustrates a ball-in-socket snubber 513, in accordance with anembodiment. The ball-in-socket snubber 513 may have a substantiallycylindrical ball 518 that is slidably disposed within a substantiallycomplimentary cylindrical socket 519. The ball-in-socket snubber 513permit desired movement of the platform 520 with respect to the outerframe 506 and limit other movement.

FIG. 19 illustrates a perspective view of the ball-in-socket 513 and twoframe hinges 526, in accordance with an embodiment. The frame hinges 526may be hinge flexures in the otherwise substantially rigid outer frame506. The frame hinges 526 permit the outer frame 506 to deformout-of-plane while maintained desired rigidity in-plane.

With reference to FIGS. 20-31, electrical routing and contact throughthe kinematic mount flexures 502 is discussed, in accordance withseveral embodiments. Such electrical routing may be used to conductelectricity from the lens barrel 200 to the actuator device 400 in orderto facilitate focusing, zooming, and/or optical image stabilization, forexample.

FIG. 20 illustrates a top view of the kinematic mount flexures 502having the electrical contact 404 formed thereto, in accordance with anembodiment. The kinematic mount flexures 502 may be formed to an outerframe 506 of an actuator device 400, for example. Polysilicon trenches2001 may be formed in the kinematic mount flexures 502 and polysilicontrenches 2002 may be formed in the electrical contact 404. As discussedherein, the kinematic mount flexures 502 and the electrical contact 404may comprise a single crystalline substrate 2211 (FIGS. 22 and 23)having a layer of polysilicon 2008 (FIGS. 22 and 23) formed thereon.

In some embodiments, the single crystalline substrate 2211 may beelectrically isolated from the polysilicon 2008, so as to facilitate acommunication of different voltages thereby. For example, the singlecrystalline substrate 2211 may be used to communicate one voltage to theactuator 550 and the polysilicon 2008 may be used to communicate anothervoltage to the same actuator 550 to effect actuation thereof.

In some embodiments, at least some portions of the single crystallinesubstrate 2211 may be in electrical communication with the polysilicon2008, so as to facilitate the communication of voltage therebetween. Forexample, the single crystalline substrate 2211 and the polysilicon 2008of one or more electrical contacts 404 may be in electricalcommunication with one another such that an electrical connection may bemade to either the top (polysilicon 2008) or the bottom (singlecrystalline substrate 2211) of the electrical contact 404 with the sameeffect.

The polysilicon trenches 2001 may be formed substantially in a center ofeach kinematic mount flexure 502 and may be formed substantiallyperpendicular to a length of the kinematic mount flexures 502, forexample. The polysilicon trenches 2001 may be adapted such that thepolysilicon trenches 2001 are suitable to electrically isolate thesingle crystalline substrate 2211 of the kinematic mount flexure 502 onone side of the polysilicon trench 2001 from the single crystallinesubstrate 2211 of the kinematic mount flexure 502 on the other side ofthe polysilicon trench 2001.

For example, the polysilicon trenches 2001 may extend completely throughand completely across the kinematic mount flexures 502. Thus, in oneembodiment, electrical contact (e.g., the application of a voltage) tothe single crystalline substrate 2211 of the kinematic mount flexure 502on one side of the polysilicon trench 2001 does not substantially affectthe single crystalline substrate 2211 of the kinematic mount flexure 502on the other side of the polysilicon trench 2001.

In this manner, desired routing of the voltages used to actuate theactuators 550 may be provided. For example, one voltage may be appliedto an electrical contact 404 and may be routed to the actuator 550 viathe polysilicon 2008 formed upon the actuator device 400 and may beisolated from the single crystalline substrate 2211 from which theactuator device 400 is formed. The polysilicon trenches 2001 may preventshorting of a voltage applied to the electrical contact 404 with respectto the single crystalline substrate 2211 of the actuator device 400.

The kinematic mount flexures 502 may be mechanically continuous. Thus,the kinematic mount flexures 502 may facilitate mounting of the actuatordevice 400 to a lens barrel 200 as discussed herein, for example.

The polysilicon trenches 2002 may be formed in the electrical contact404 to provide electrical communication through the electrical contact404. Thus, a voltage applied to one side of the electrical contact 404may be provided to the other side of the electrical contact 404. Anydesired number of the polysilicon trenches 2002 may be formed in theelectrical contact 404.

The use of such trenches 2001 and 2002 may provide substantialflexibility in the routing of voltages, such as through the actuatordevice 400 for the actuation of the actuators 550 thereof, for example.The use of through-the-thickness (top to bottom) polysilicon or anotherconductive material 2008 filled trenches 2002 may provide flexibility inthe routing of voltages from one surface of the actuator device 400 tothe other surface thereof. Such trenches 2002 may be used at any desiredlocation and are not limited in location to the electrical contacts 404.

FIG. 21 illustrates the kinematic mount flexure 502, in accordance withan embodiment. A single polysilicon trench 2002 may be formed in theelectrical contact 404 such that the polysilicon trench 2002 extendscompletely through the electrical contact 404 and does not completelycross the electrical contact 404 (e.g., such that the polysilicon trench2002 does not separate the electrical contact 404 into two electricallyisolated portions). The polysilicon trench 2002 may be used to provideelectrical communication between surfaces of the electrical contact. Forexample, the polysilicon trench 2002 may be used to provide electricalcommunication between a top surface 2003 and a bottom surface 2004 ofthe electrical contact 404.

FIG. 22 illustrates a cross-section of the kinematic mount flexure 502taken along line 22 of FIG. 21, in accordance with an embodiment. Thepolysilicon trench 2001 formed in the single crystalline substrate 2211may have an oxide layer 2007 formed thereon. The polysilicon 2008 may beformed upon the oxide layer 2007. In one embodiment, the singlecrystalline substrate 2211 of the kinematic mount flexure 502 may beformed of doped single crystalline silicon and the polysilicon 2008 maybe formed of a doped polysilicon. Thus, the single crystalline substrate2211 of the kinematic mount flexure 502 and the polysilicon 2008 of thekinematic mount flexure 502 may both be at least partially conductiveand may be used to route voltages (such as to the actuators 550, forexample). The oxide layer 2007 may electrically isolate the polysilicon2008 from the single crystalline substrate 2211 of the kinematic mountflexure 502.

An undercut 2011 may be formed in the trench 2001 by removing a portionof the oxide layer 2007. The portion of the oxide layer 2007 may beremoved during an etching process, for example.

FIG. 23 illustrates a cross-section of the electrical contact takenalong line 23 of FIG. 21, in accordance with an embodiment. Thepolysilicon trench 2002 may have the oxide layer 2007 formed thereon.The polysilicon 2008 may be formed upon the oxide layer 2007. Theelectrical contact 404 may be formed of doped single crystallinepolysilicon and the polysilicon 2008 may be formed of doped polysilicon.Thus, the electrical contact 404 and the polysilicon 2008 may be atleast partially conductive and may be used to route voltages. The oxidelayer 2007 may be used to electrically isolate the polysilicon 2008 fromthe electrical contact 404.

A metal contact pad 2009 may be in electrical communication with boththe polysilicon 2008 and the single crystalline silicon 2211. Thus, themetal contact pad 2009 may be used to apply a voltage to both surfaces(top and bottom) of the electrical contact 404.

Use of the trenches 2001 and 2002 permits use of the metal contact pad2009 on either side of the electrical contact 404. Thus, use of thetrenches 2001 and 2002 enhances the flexibility of providing voltages tothe actuator device 400.

An undercut 2011 may be formed in the trench 2002 by removing a portionof the oxide layer 2007. A portion of the oxide layer 2007 may beremoved during an etching process, for example.

FIG. 24 illustrates the kinematic mount flexure 502 having nopolysilicon trench 2001 formed therein and the electrical contact 404having no polysilicon trench 2002 formed therein, in accordance with anembodiment. Thus, the single crystalline silicon substrate 2211 (seeFIG. 25), for example, is electrically and mechanically continuous.According to an embodiment, electrical connection may be made to eitherdesired surface (e.g., top or bottom) of the electrical contact 404.

FIG. 25 illustrates a cross-section of the electrical contact takenalong line 25 of FIG. 24, in accordance with an embodiment. The singlecrystalline silicon substrate 2211, for example, is electrically andmechanically continuous since no polysilicon trench 2002 is formedtherein.

FIG. 26 illustrates the kinematic mount flexure 502 having theelectrical contact 404, in accordance with an embodiment. A polysiliconlayer 2701 may be formed upon the kinematic mount flexures 502 and/orthe electrical contact 404. The polysilicon layer 2701 may provideelectrical communication from the electrical contact 404 to theactuators 550, for example.

FIG. 27 illustrates a cross-section of the electrical contact takenalong line 27 of FIG. 26, in accordance with an embodiment. Thepolysilicon layer 2701 may be formed upon an oxide layer 2702 toelectrically isolate polysilicon layer 2701 from a single crystallinesubstrate 2703, for example. Thus, an electrical connection providingone voltage to the polysilicon layer 2701 may be made via the top of theelectrical contact 404 and an electrical connection providing adifferent voltage to the single crystalline substrate 2703 may be madevia the bottom of the electrical contact 404.

FIG. 28 illustrates a cross-section of the electrical contact 404 takenalong line 28 of FIG. 26, in accordance with an embodiment. Thepolysilicon layer 2701 may extend over the top surface of the electricalcontact 404 and down along at least one side thereof. The polysiliconlayer 2701 may be electrically isolated from the single crystallinesubstrate 2703 by the oxide layer 2702. A portion of the oxide layer2702 may be etched away during processing, forming an undercut 2801. Ametal contact pad 2802 may be formed to the single crystalline substrate2703 to facilitate electrical contact therewith.

FIG. 29 illustrates the kinematic mount flexure 502 having theelectrical contact 404, in accordance with an embodiment. The electricalcontact 404 and the kinematic mount flexure 502 may facilitate mountingof the actuator device 400, such as within a lens barrel 200, asdiscussed herein. The electrical contact 404 and the kinematic mountflexure 502 may facilitate electrical communication between the lensbarrel and actuators 550 of the actuator device, as discussed herein.The flexures 502 may, for example, accommodate manufacturingimperfections or tolerances of the actuator device 400 and/or the lensbarrel 200 while mitigating stress upon the actuator device 400 causedby such imperfections.

FIG. 30 illustrates the actuator device 400 having the kinematic mountflexures 502, in accordance with an embodiment. The hatched sections ofthe actuator device 400 shown in FIG. 30 indicate where the top layer ofpolysilicon layer 2701 may be formed in an embodiment where thepolysilicon layer 2701 is continuous among all three actuators 550.Thus, a single electrical signal (e.g., voltage) may readily be appliedto all three actuators 550 to effect substantially identical andsubstantially simultaneous control thereof. That is, the three actuators550 may tend to move substantially in unison with respect to one anotherin response to the single electrical signal.

FIG. 31 illustrates the actuator device 400 having the kinematic mountflexures 502, in accordance with an embodiment. The hatched sections ofthe actuator device 400 shown in FIG. 31 indicate where the top layer ofpolysilicon layer 2701 may be formed in an embodiment where thepolysilicon layer 2701 is discontinuous among all three actuators 550.Thus, separate electrical signals (e.g., voltage) may readily be appliedindependently to each of the actuators 550 to effect substantiallyindependent control thereof. That is, the three actuators 550 may becontrolled so as to move substantially in non-unison with respect to oneanother in response to the different electrical signals.

With reference to FIGS. 32-58, methods for separating structures, suchas MEMS structures, are discussed in accordance with severalembodiments. Separated structures may be used to provide mechanicaland/or electrical isolation thereof, such as for structures of theactuator device 400, for example. Structures made of the same materialmay be separated from one another. Structures made of differentmaterials may be separated from one another. Structures may be separatedto facilitate relative motion to one another. Structures may beseparated to define a desired device or structure by discarding aseparated structure. Structures may be separated to allow differentvoltages to be present at each structure.

FIGS. 32-48 illustrate an example of an embodiment for forming one typeof the separated structures. FIGS. 49-56 illustrate an example of anembodiment for forming another type of the separated structures. FIGS.57 and 58 illustrate an example of the use of the separated structuresin the fabrication of the actuator device 400.

FIG. 32 illustrates a perspective view of a substrate 3202 having atrench 3201 formed therein, in accordance with an embodiment. Thesubstrate 3202 may be a first semiconductor material. The substrate 3202may be a non-conductor or a conductor. For example, the substrate 3202may be single crystalline silicon. The substrate 3202 may be any desiredtype of semiconductor material. The substrate 3202 may be anon-semiconductor material, such as a metal.

The trench 3201 may have a narrow portion or pinch 3203 formed therein.The trench 3201 may be etched into the substrate 3202. For example, adeep reactive-ion etching (DRIE) process may be used to form the trench3202. Examples of DRIE processes are disclosed in U.S. patentapplication Ser. No. 11/365,047, filed Feb. 28, 2002, and in U.S. patentapplication Ser. No. 11/734,700, filed Apr. 12, 2007, all of which areincorporated herein by reference in their entirety.

In one embodiment, the trench 3201 may be etched part of the way fromthe top of the substrate 3202 to the bottom thereof. In anotherembodiment, the trench 3201 may be etched completely through thesubstrate 3202 (e.g., all of the way from the top of the substrate 3202to the bottom thereof). FIG. 36 shows the trench 3201 etched part of theway from the top of the substrate 3202 to the bottom thereof. A bottomportion 3501 (see FIG. 39) of the substrate 3202 through which thetrench 3201 does not extend may be removed during subsequent processing,as discussed herein. The trench 3201 may have any desired length. Thetrench 3201, as well as any other trench discussed herein, may belocally etched, such as via the DRIE process.

FIG. 33 illustrates a top view of the substrate 3202 with the trench3201 having the pinch 3203 formed therein, in accordance with anembodiment. A gap 3205 may be defined by the pinch 3203. The pinch 3203may be formed on either one side or both sides of the trench 3201. Thegap 3205 may be defined as a portion of the trench 3201 that is narrowerthan adjacent portions of the trench 3201.

FIG. 34 illustrates a cross-sectional view of the substrate 3202 withthe trench 3201 having the pinch 3203 formed therein, in accordance withan embodiment. The cross-sectional view of FIG. 34 is taken along line34 of FIG. 33. As may be seen, the trench 3202, including the gap 3205,tapers slightly from top to bottom. A taper angle “I” may result fromthe DRIE process when the trench 3201 is etched into the substrate 3202.In one embodiment, the taper angle “I” may be less than one degree. Forexample, the taper angle “I” may be in the range of approximately 0.6 toapproximately 0.8 degrees. The taper angle “I” is exaggerated forclarity in the figures.

FIG. 35 illustrates a cross-sectional view of the substrate 3202 withthe trench 3201 having the pinch 3203 formed therein, in accordance withan embodiment. The cross-sectional view of FIG. 35 is taken along line35 of FIG. 33. A bottom portion 3501 of the substrate 3202 is definedbeyond the bottom of the trench 3201. The bottom portion 3501 may beremoved during subsequent processing such that after removal the trench3201 extends completely through the substrate 3202.

FIG. 36 illustrates a perspective view of the substrate 3202 having anoxide layer 3601 formed within the trench 3201, in accordance with anembodiment. The oxide layer 3601 may comprise silicon dioxide, forexample. In one embodiment, the oxide layer 3601 may be formed by athermal growth process, in which case the thermal growth processconsumes some of the silicon substrate 3202. The oxide layer 3601 maysubstantially fill the gap 3205 (see FIG. 33). The oxide layer 3601 maycompletely fill the gap 3205. By filling the gap 3205, the oxide layer3601 facilitates the separation of a subsequently formed polysiliconmaterial into two separate portion thereof.

FIG. 37 illustrates a top view of the substrate 3202 having the oxidelayer 3601 formed therein, in accordance with an embodiment. As may beseen, the oxide 3601 defines four regions. The oxide layer 3601separates the substrate 3202 into two regions and separates the trench3601 into two regions (each of which may be filled with polysilicon orany other material), as discussed in further detail herein.

FIG. 38 illustrates a cross-sectional view of the substrate 3202 havingthe oxide layer 3601 formed therein, in accordance with an embodiment.The cross-sectional view of FIG. 38 is taken along line 38 of FIG. 37.

FIG. 39 illustrates a cross-sectional view of the substrate 3202 havingthe oxide layer 3601 formed therein, in accordance with an embodiment.The cross-sectional view of FIG. 39 is taken along line 39 of FIG. 37.As discussed herein, a bottom portion 3501 of the substrate 3202 may beremoved during subsequent processing such that the trench 3201 will thenextend completely through the substrate 3202.

FIG. 40 illustrates a perspective view of the substrate 3202 having asecond semiconductor material, such as a polysilicon 4001, formed uponoxide layer 3601, in accordance with an embodiment. Rather than a secondsemiconductor material, a conductor or a non-conductor may be used.Thus, the substrate 3202 and the material with which the trench 3201 isfilled may comprise a first semiconductor material, a first conductivematerial, or a first non-conductive material, as well as a secondsemiconductor material, a second conductive material, or a secondnon-conductive material. The first semiconductor material and the secondsemiconductor material may be the same semiconductor materials or may bedifferent semiconductor materials. The first semiconductor material andthe second semiconductor material may be any desired semiconductormaterials. Non-semiconductor materials may be used as discussed herein.

FIG. 41 illustrates a top view of the substrate 3202 having thepolysilicon 4001 formed upon oxide layer 3601, in accordance with anembodiment same as FIG. 38.

FIG. 42 illustrates a cross-sectional view of the substrate 3202 thepolysilicon 4001 formed upon oxide layer 3601, in accordance with anembodiment. The taper angle “I” as shown may be exaggerated for clarity.

FIG. 43 illustrates a cross-sectional view of the substrate 3202 havingthe polysilicon formed upon oxide layer 3601, in accordance with anembodiment.

FIG. 44 illustrates a perspective view of the substrate 3202 (includingportions 3202 a and 3202 b) after a wafer thinning and oxide removalprocess, in accordance with an embodiment. During the wafer thinningprocess, the bottom portion 3501 (see FIG. 43) of the substrate 3202 maybe removed such that the trench 3201 extends completely through thesubstrate 3202.

FIG. 45 illustrates a top view of substrate 3202 the after waferthinning and oxide removal, in accordance with an embodiment. The taperangle ‘I” and a consumption of the silicon during the thermal growthprocess cooperate to separate the polysilicon 4001 into two portions4001 a and 4001 b. In one embodiment, the separation is at the thinnestpart of the trench 3201 (i.e., at the pinch 3203).

FIG. 46 illustrates a bottom view of the substrate 3202 after the waferthinning and oxide removal process, in accordance with an embodiment.All or a portion of the oxide 3601 may be removed.

FIG. 47 illustrates a cross-sectional view of the substrate 3202 afterthe wafer thinning and oxide removal process, in accordance with anembodiment. The taper angle “I” is exaggerated for clarity in thefigures.

FIG. 48 illustrates a cross-sectional view of the substrate 3202 afterthe wafer thinning and oxide removal process, in accordance with anembodiment the taper angle “I” is exaggerated for clarity in thefigures. As shown, the single crystalline silicon substrate 3202 may beseparated into two portions 3202 a and 3202 b and the polysilicon 4001may each be separated into two portions 4001 a and 4001 b. Each portion3202 a and 3202 b of the substrate 3202 and t each portion 4001 a and4001 b of the polysilicon 4001 may be mechanically and/or electricallyisolated from each other portion thereof. Indeed, each portion 3202 aand 3202 b of the substrate 3202 may be mechanically and/or electricallyisolated from each other, and from each portion 4001 a and 4001 b of thepolysilicon 4001. Each portion 4001 a and 4001 b of the polysilicon 4001may be mechanically and/or electrically isolated from each other, andfrom each portion 3202 a and 3202 b of the substrate 3202. Thus,structures made from the same material may be separated from one anotherand structures made from different material may be separated from oneanother.

In the embodiments discussed with reference to FIGS. 32-48 above, theuse of the pinch 3203 facilitates the separation of two portions of thepolysilicon 4001 with respect to one another. In the embodimentsdiscussed with respect to FIGS. 49-56, an etch process facilitates theseparation of two portions of a polysilicon 5101 with respect to oneanother.

FIG. 49 illustrates the result of a DRIE trench etch process, inaccordance with an embodiment. A substrate 4901 may comprise a firstsemiconductor as discussed herein. A trench 4902 may be formed in thesubstrate 4901.

FIG. 50 illustrates the result of a thermal oxidation process, inaccordance with an embodiment. An oxide layer 5001 may be formed in thetrench 4902 as discussed herein. The oxide layer 5001 may also be formedupon a top of the substrate 4901.

FIG. 51 illustrates the result of a polysilicon deposition process, inaccordance with an embodiment. A polysilicon 5101 may be deposited overthe oxide layer 5001. The polysilicon 5101 may fill the trench 4902 andmay extend over the entire top of the substrate 4901 or over a portionof the top of the substrate 4901.

FIG. 52 illustrates the result of an oxide etch process, in accordancewith an embodiment. A portion of the polysilicon 5101 and asubstantially corresponding portion of the oxide layer 5001 may beremoved, such as by etching. The removal of the polysilicon 5101 and theoxide layer 5001 may form a trough 5201.

FIG. 53 illustrates the result of a pinch off DRIE etch process, inaccordance with an embodiment. The etch process may result in theformation of a pinch or gap 5301 that separates the polysilicon 5101into two portions 5101 a and 5101 b. At this point in processing, thetrench 4902 may not extend completely from a top to a bottom of thesubstrate 4901.

The gap 5201 is functionally similar to the pinch 3203 of FIG. 33. Thegap 5201 facilitates the separation of portions 5101 a and 5101 b of thepolysilicon 5101 from one another.

FIG. 54 illustrates the result of a wafer thinning process, inaccordance with an embodiment. The wafer thinning process may be used toremove a sufficient portion of the bottom of the substrate 4901 suchthat the trench 4902 extends completely from the top to the bottom ofthe substrate 4901.

FIG. 55 illustrates the result of an isotropic oxide etch processapplied to the substrate 4901, in accordance with an embodiment. Theisotropic oxide etch may be use to removed a portion of the oxide layer5001. The isotropic oxide etch process may release four structures(i.e., the two portions 4901 a and 4901 b of the substrate 4901 and thetwo portions 5101 a and 5101 b of the polysilicon 5101) from each other.Thus, the four structures may be mechanically and/or electricallyisolated from one another. The isotropic oxide etch process may be usedto selectively release or separate any desired structures or portions ofstructures from one another.

FIG. 56 illustrates a separation in the polysilicon 5101, in accordancewith an embodiment. As shown, both the single crystalline siliconsubstrate 4901 and the polysilicon 5101 may be separated into twoportions each. Each of the two portions 4901 a and 4901 b of the singlecrystalline substrate 4901 may be mechanically and electronicallyisolated from one another and from each of the two portions 5101 a and5101 b of the polysilicon 5101. Each of the two portions 5101 a and 5101b of the polysilicon 5101 may be mechanically and electrically isolatedfrom one another and from each of the two portions 4901 a and 4901 b ofthe single crystalline substrate 4901. One portion of the substrate 4901is not shown in FIG. 56 for clarity.

FIG. 57 illustrates an example of a use of a pinch or separation 5805(see FIG. 58) to separate structures of an actuator device 5700, inaccordance with an embodiment. In one embodiment, actuator device 5700may be used to implement actuator device 400. The separation 5805 occursin the circle 5803 at the lower right corner of the actuator device5700.

FIG. 58 illustrates an enlarged view of an example of the use of theseparation 5301 or pinch 3203 to facilitate the separation ofstructures, in accordance with an embodiment. In this example, movingpolysilicon structures 5801 are separated from stationary polysiliconstructures 5804 and stationary single crystalline structures 5806.Advantage may be taken of the mechanical separation of the movingpolysilicon structures 5801 with respect to the stationary polysiliconstructures 5804 to facilitate movement of the moving polysiliconstructures 5801 with respect to the stationary polysilicon structures5804. Advantage may be taken of the electrical separation of the movingpolysilicon structures 5801 with respect to the stationary polysiliconstructures 5804 to facilitate the application of different voltages tothe moving polysilicon structures 5801 and the stationary polysiliconstructures 5804.

A silicon fillet 5802 may fall off or be removed from the actuatordevice 5700 during fabrication thereof and thus may not form a partthereof. The silicon fillet 5802 is material that is removed from thesingle crystalline substrate 4901 to form the actuator device 400.Again, the separation 5805 is shown prior to etching thereof. Afteretching, the moving polysilicon 5801 will be free to move with respectto the stationary polysilicon 5804. Thus, the moving polysilicon 5801will be separated from the stationary polysilicon 5804 as discussed withrespect to FIGS. 32-56.

With reference to FIGS. 59-66, a guard trench 5901 is discussed, inaccordance with several embodiments. The guard trench 5901 may be usedfor supporting a polysilicon layer 5905 (see FIG. 61) during the etchingof an oxide layer 5904 (FIG. 60) and for limiting the resulting etch ofthe oxide layer 5904 behind the guard trench 5901, for example. In oneembodiment, the guard trench 5901 may be a blind trench that provides anincreased path length of the oxide layer 5904 to be etched such that theetch is inhibited from extending to portions of the oxide layer 5904where etching is not desired. The use of the guard trench 5901 permits alarger tolerance or variation in etch parameters (such as etchant,etchant concentration, temperature, duration) without the variationundesirably affecting device operation or performance.

FIG. 59 illustrates a guard trench 5901 formed proximate a regulartrench 5902 in a substrate 5903, in accordance with an embodiment. Theregular trench 5902 may provide any designed function. For example, thepolysilicon in the trench may concentrate voltages across the actuatordevice 400 to one or more actuators 550. The guard trench 5901 may bedeeper than the regular trench 5902, the same depth as the regulartrench 5902, or shallower than the regular trench 5902. The guard trench5901 may be substantially parallel with respect to the regular trench5902 or may be non-parallel with respect to the regular trench 5902. Theguard trench 5901 and/or the regular trench 5902 may be formed by a DRIEprocess or by any other desired method.

FIG. 60 illustrates an oxide layer 5904 formed in the guard trench 5901and the regular trench 5902, in accordance with an embodiment. The oxidelayer 5904 may comprise silicon dioxide and may be formed by a thermaloxidation process.

FIG. 61 illustrates a polysilicon 5905 formed upon the oxide layer 5904,in accordance with an embodiment. The polysilicon 5905 may completelyfill the guard trench 5901 and/or the regular trench 5902.

FIG. 62 illustrates the oxide layer 5904 and the polysilicon 5905 aftersurface etching, in accordance with an embodiment. During surfaceetching a portion of the oxide layer 5904 and the polysilicon 5905 maybe removed from the top surface of the substrate 5903. For example, aportion of the oxide layer 5904 and the polysilicon 5905 may be removedfrom the top surface of the substrate 5903 to facilitate a desiredrouting of voltages upon a surface of an actuator device 6500 (see FIG.65).

FIG. 63 illustrates the substrate 5903 after a wafer thinning process,in accordance with an embodiment. During the wafer thinning process, abottom portion 5907 (see FIG. 62) of the substrate 5903 may be removed.Removal of the bottom portion 5907 of the substrate 5903 may result inthe regular trench 5902 and/or the guard trench 5901 extending from atop surface of the substrate to a bottom surface of the substrate 5903.For example, removal of the bottom portion of the substrate 5903 mayresult in the regular trench 5902 extending from the top surface of thesubstrate 5903 to the bottom surface of the substrate 5903 and the guardtrench 5901 not extending from the top surface of the substrate 5903 tothe bottom surface of the substrate 5903. Thus, the guard trench 5901may be a blind trench and the regular trench 5902 may be a throughtrench, for example.

FIG. 64 illustrates the substrate 5903, the oxide layer 5904, and thepolysilicon 5905 after an isotropic oxide etch, in accordance with anembodiment. After the isotropic etch, a portion of the polysilicon 5905may be released by the formation of an undercut 6401.

The guard trench 5901 inhibits the undercut 6401 from propagating to theregular trench such that the polysilicon 5905 proximate the regulartrench 5902 is not released from the substrate 5903 and thus remainssubstantially attached thereto. In this manner, the guard trench 5901tends to protect the regular trench 5902 from undesirable undercut andrelease. The guard trench can assure mechanical support to the top ploylayer 5905, and/or prevents the overhanging ploy layer from contactingthe silicon surface and causing an electrical short.

FIG. 65 illustrates an actuator device 6500 having the guard trench5901, in accordance with an embodiment. In one embodiment, actuatordevice 6500 may be used to implement actuator device 400. The guardtrench 5901 is not shown in FIG. 65 and is shown in an enlarged view ofthe area within a circle 66 of FIG. 65.

FIG. 66 illustrates the enlarged view of the guard trench 5901, inaccordance with an embodiment. The guard trench 5901 is formed proximatethe regular trench 5902 in the substrate 5903. In FIG. 66, the guardtrench 5901 is irregular (e.g., curved) in shape and not parallel to theregular trench 5902. The guard trench 5901 tends to maintain the oxidelayer 5904 in an area upon the substrate 5903 where the oxide layer 5904is used to connect a flexure, such as a deployment torsional flexure509, or after flexure.

FIGS. 67-74 illustrate some processes that may be used to form variousembodiments disclosed herein. Those skilled in the art will appreciatethat various other processes may be used. Thus, the discussion of suchprocesses is by way of illustration only and not by way of limitation.

FIG. 67 illustrates a DRIE process, in accordance with an embodiment.The DRIE process may be used to form a plurality of trenches 6702 in asubstrate 6701. The trenches 6702 may be etched in the substrate 6701 aspart of a process for forming the actuator device 400 (see FIG. 5A), forexample.

FIG. 68 illustrates a linear oxide growth process, in accordance with anembodiment. An oxide layer 6801 may be formed over one (e.g., the top)surface of the substrate 6701. The oxide layer 6801 may be formed overboth (e.g., the top and bottom) surfaces of the substrate 6701. Theoxide layer 6801 may only partially fill the trenches 6702. The oxidelayer 6801 may be comparatively thin with respect to a width, “W”, (seeFIG. 67) of the trenches 6702.

FIG. 69 illustrates a polysilicon (other materials are contemplated)deposition process, in accordance with an embodiment. Polysilicon 6901may be formed over the oxide layer 6801 on one (e.g., the top) surfaceof the substrate 6701. The polysilicon 6901 may be formed over the oxidelayers 6801 on both (e.g., the top and bottom) surfaces of the substrate6701. The polysilicon 6901 may completely fill the trenches 6702.

FIG. 70 illustrates a polysilicon and oxide etch process, in accordancewith an embodiment. Selected portions of the polysilicon 6901 and/oroxide layer 6801 may be removed via etching. Portions of the polysilicon6901 and/or oxide layer 6801 that are to remain may be masked to preventetching thereof.

In this manner, polysilicon conductors may be patterned. The polysiliconconductors may be formed inside and/or outside of the trenches 6702. Thepolysilicon conductors may be used to communicated voltages, such asfrom one location to another location of the actuator device 400. Thus,the polysilicon conductors may be used to facilitate actuation of theactuators 550.

FIG. 71 illustrates a DRIE process, in accordance with an embodiment.The DRIE process may be used to substantially remove the polysilicon6901 and/or the oxide layer 6801 from one or more of the trenches 6702.A mask may be used to determine what portions of the polysilicon 6901and/or the oxide layer 6801 are removed. Removal of the polysilicon 6901and/or oxide layer 6801 from a trench 6702 may facilitate the formationof a pinch or separation that facilitates the separation of thesubstrate 6701 into two portions 6701 a and 6701 b (see FIG. 73).

Selective removal of the oxide layer 6801 may provide a separation of apredetermined distance (i.e., the thickness of the oxide layer 6801).For example, the oxide layer 6801 may have a thickness of approximately2 microns to 4 microns (such as 3 microns, for example) and may beremoved to provide a separation between the remaining polysilicon 6901and the substrate 6701 of this distance.

FIG. 72 illustrates a metallization process, in accordance with anembodiment. Metal conductors, contacts, and/or bond pads 7201 may beformed upon selected portion of the substrate 6701, the oxide layer6801, and/or the polysilicon 6901. Such bond pads 7201 may facilitateelectrical connection from the lens barrel 200 (see FIG. 2) to theactuator device 400, for example.

FIG. 73 illustrates a wafer thinning process, in accordance with anembodiment. A bottom portion 7205 (see FIG. 72) of the substrate 6701may be removed such that one or more of the trenches 6801 extendcompletely from the top of the substrate 6701 to the bottom in mannerthat separates the substrate into two portions 6701 a and 6701 bthereof. The two portions 6701 a and 6701 b may be mechanically and/orelectrically isolated with respect to one another.

Removal of the polysilicon 6901 from a trench 6702 may facilitate theformation of a pinch or separation that facilitates the separation ofthe substrate 6701 into two portions 6701 a and 6701 b (see FIG. 73),thus forming two separated structures or devices 7302 and 7303.

FIG. 74 illustrates isotropic oxide etch process, in accordance with anembodiment. The isotropic oxide etch process may be used to removeand/or undercut the oxide layer 6801 from the two portions 6701 a and/or6701 b of the substrate 6701.

The selective removal of the oxide layer 6801 may facilitate thefabrication of desired structures, as discussed herein. For example, thelateral snubber assembly 1001 of FIG. 10 may be formed using suchprocessing.

Single crystalline silicon and polysilicon are discussed herein asexamples of materials from which structures may be fabricated. Suchdiscussion is by way of example only and not by way of limitation.Various other semiconductor materials and various non-semiconductor(e.g. conductor or non-conductor) materials may be used.

Although the actuator disclosed herein is described as a MEMS actuator,such description is by way of example only and not by way of limitation.Various embodiments may include non-MEMS actuators, components ofnon-MEMS actuators, and/or features of non-MEMS actuators.

Thus, an actuator suitable for use in a wide variety of differentelectronic devices may be provided. Motion control of the actuatorand/or items moved by the actuator may also be provided. As such, anenhanced miniature camera for use in electronic devices may be provided.

According to various embodiments, smaller size and enhanced shockresistance for miniature cameras are provided. Enhanced fabricationtechniques may be used to provide these and other advantages. Thus, suchfabrication techniques may additionally enhance the overall quality andreliability of miniature cameras while also substantially reducing thecost thereof.

Where applicable, the various components set forth herein may becombined into composite components and/or separated into sub-components.Where applicable, the ordering of various steps described herein may bechanged, combined into composite steps, and/or separated into sub-stepsto provide features described herein.

Embodiments described herein illustrate but do not limit the disclosure.It should also be understood that numerous modifications and variationsare possible in accordance with the principles of the disclosure.

1-20. (canceled)
 21. A microelectromechanical systems (MEMS) devicecomprising: a substrate having a first outer surface and a second outersurface opposite said first outer surface; a channel formed in saidsubstrate, said channel having a first opening defined by said firstouter surface of said substrate, said channel being at least partiallybounded by a first side wall and an opposite facing second side wall,said first side wall and said second side wall extending from said firstouter surface toward said second outer surface; and a first body ofcircuitry material having a first portion disposed in said channel and asecond portion extending over said first outer surface of saidsubstrate, said second portion of said first body of circuitry materialextending from said first portion of said first body of circuitrymaterial.
 21. The MEMS device of claim 21, wherein: said first portionof said first body of circuitry material is spaced apart from said firstside wall of said channel, defining a first gap between said firstportion of said first body of circuitry material and said first sidewallof said channel; said first portion of said first body of circuitrymaterial is spaced apart from said second side wall of said channel,defining a second gap between said first portion of said first body ofcircuitry material and said second sidewall of said channel; and saidsecond portion of said first body of circuitry material is spaced apartfrom said first outer surface of said substrate, defining a third gapbetween said second portion of said first body of circuitry material andsaid first outer surface of said substrate on a first side of saidchannel.
 23. The MEMS device of claim 22, wherein: said second portionof said first body of circuitry material extends from said first portionof said first body of circuitry material in a first direction; saidfirst body of circuitry material further includes a third portionextending over said first outer surface of said substrate; said thirdportion of said first body of said circuitry material extends from saidfirst portion of said first body of circuitry material in a seconddirection opposite said first direction; and said third portion of saidfirst body of circuitry material is spaced apart from said first surfaceof said substrate, defining a fourth gap between said third portion ofsaid first body of circuitry material and said first outer surface ofsaid substrate on a second side of said channel opposite said first sideof said channel.
 24. The MEMS device of claim 23, said first gap, saidsecond gap, said third gap, and said fourth gap are all empty.
 25. TheMEMS device of claim 23, wherein said first body of said circuitrymaterial is electrically and mechanically isolated from said substrate.26. The MEMS device of claim 21, wherein said substrate is asemiconductor.
 27. The MEMS device of claim 21, wherein: said substrateis single-crystaline silicon; and said first body of said circuitrymaterial includes polysilicon.
 28. The MEMS device of claim 21, whereinsaid channel passes completely through said substrate such that saidfirst outer surface of said substrate defines said first opening of saidchannel and said second outer surface of said substrate defines a secondopening of said channel.
 29. The MEMS device of claim 21, furthercomprising a second body of circuitry material having a first portiondisposed in said channel and a second portion extending over said firstouter surface of said substrate, said second portion of said second bodyof circuitry material extending from said first portion of said secondbody of circuitry material.
 30. The MEMS device of claim 29, wherein:said second portion of said first body of circuitry material extendsfrom said first portion of said first body of circuitry material in afirst direction; said first body of circuitry material further includesa third portion extending over said first outer surface of saidsubstrate; said third portion of said first body of said circuitrymaterial extends from said first portion of said first body of circuitrymaterial in a second direction opposite said first direction; saidsecond portion of said second body of circuitry material extends fromsaid first portion of said second body of circuitry material in saidfirst direction; said second body of circuitry material further includesa third portion extending over said first outer surface of saidsubstrate; said third portion of said second body of circuitry materialextends from said first portion of said second body of circuitrymaterial in said second direction.
 31. The MEMS device of claim 30,wherein: said first portion of said first body of circuitry materialextends from said second portion and said third portion of said firstbody of circuitry material in a direction perpendicular to said firstdirection and said second direction; and said first portion of saidsecond body of circuitry material extends from said second portion andsaid third portion of said second body of circuitry material in adirection perpendicular to said first direction and said seconddirection.
 32. The MEMS device of claim 29, wherein said channel passescompletely through said substrate such that said first outer surface ofsaid substrate defines a first opening of said channel and said secondouter surface of said substrate defines a second opening of saidchannel.
 33. The MEMS device of claim 29, wherein said first body ofcircuitry material is mechanically and electrically isolated from saidsubstrate and said second body of said circuitry material; said secondbody of circuitry material is mechanically and electrically isolatedfrom said substrate.
 34. A method of manufacturing a MEMS device, saidmethod comprising: providing a substrate having a first outer surfaceand an opposite second outer surface; forming a channel in saidsubstrate through said first outer surface of said substrate, saidchannel being defined by a first interior surface of said substrate anda second interior surface of said substrate; depositing a layer ofinsulating material on said first outer surface of said substrate, saidfirst interior surface of said substrate, and said second interiorsurface of said substrate; depositing a circuitry material over saidlayer of said insulation material in said channel and on said firstouter surface of said substrate, thereby forming an unitary body of saidcircuitry material having a first portion disposed in said channel, asecond portion over said first outer surface of said substrate on afirst side of said channel, and a third portion over said first outersurface of said substrate on a second side of said channel; and removingsaid insulation material from between said unitary body of saidcircuitry material and said substrate, thereby mechanically isolatingsaid unitary body of said circuitry material from said substrate. 35.The method of claim 34, further comprising removing a portion of saidsecond outer surface of said substrate to open said channel through saidsecond outer surface of said substrate.
 36. The method of claim 35,wherein said step of removing said portion of said second outer surfaceof said substrate is carried out before said step of removing saidinsulation material from between said unitary body of said circuitrymaterial and said substrate.
 37. The method of claim 34, furthercomprising removing a portion of said circuitry material from saidchannel to divide said unitary body of said circuitry material into atleast two discrete and mechanically separate bodies of said circuitrymaterial simultaneously disposed in said channel.
 38. The method ofclaim 37, wherein said step of removing a portion of said circuitrymaterial from said channel is carried out before said step of removingsaid insulation material from between said unitary body of saidcircuitry material and said substrate.
 39. The method of claim 38,further comprising removing a portion of said second outer surface ofsaid substrate to open said channel through said second outer surface ofsaid substrate.
 40. The method of claim 39, wherein said step ofremoving said portion of said second outer surface of said substrate iscarried out before said step of removing said insulation material frombetween said unitary body of said circuitry material and said substrate.